The source materials used for the preparation of films were tin selenide and stannic chloride. Applications. Tin Selenide is a narrow band gap binary IV-VI semiconductor material. Tin selenide was synthesized by mechanical alloying method and the films were grown by economic screen-printing method on glass substrate. It is one of the promising materials from its applications. Tin is a silvery, soft and pliable metal which resists corrosion. Car et al. It is also suitable for various optoelectronic applications like memory switching devices, light emitting devices (LED), holographic recording systems among others. of Physics, Ain Shams University, Cairo. 4 Tin selenide (1978) –Istituto di Fisica del Politecnico, Milano Calculated bandgap: 2.1 eV Experimental value (Albers et al. The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. Tin selenide can exist in two phases- hexagonal-phase SnSe 2 and orthorhombic-phase SnSe . (1995) –Dept. (1962)): 0.9 eV 2. In 2014, researchers at Northwestern University discovered that tin selenide (SnSe) has a ZT of 2.6 along the b axis of the unit cell. This is the highest value reported to date. The atomic number of tin is 50 and it is a period 4, group 4 element in the periodic table. Introduction. SnSe powder has been prepared using chemical precipitation method in deionized water. The chemical name for tin is stannum and is represented by Sn. In this review, we focus on the recent research progress in the area of design and synthesis of tin sulfides and selenides (SnS, SnS2, SnSe, and SnSe2) based anode materials for LIBs and NIBs. Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. Unlike tin oxides which are insulators, tin selenide is a narrow band gap semiconductor and is considered to be a promising material for several applications such as solar cells, optoelectronic devices and memory switching devices , , . The structural, elemental, morphological, optical and electrical properties of the prepared films were investigated by X-ray diffraction (XRD), energy … It is thus capable of absorbing a major portion of solar energy hence its use in fabricating solar cells. for Tin Selenide Dr. HoSung Lee April 2, 2015 1. The diode characteristics such as short circuit current (Isc),open circuit voltage (Voc),fill factor (FF) and conversion coefficient (11) of the solar cell will be determined. The nanocrystalline Tin selenide. Tin selenide (SnSe) is a newly emerging layered material. This high ZT figure of merit has been attributed to an extremely low thermal conductivity found in the SnSe lattice. Tin selenide offer a range of optical band gaps suitable for various optical and optoelectronic applications. In present investigations the structural properties of nanoparticles of Tin Selenide (SnSe) of group IV-VI semiconductors is reported. Layered tin sulfides have attracted great interest as high-capacity anode materials in Li-ion batteries (LIBs) and Na-ion batteries (NIBs). Tin monoselenide (SnSe) and tin diselenide (SnSe 2) are promising candidates for solar cell applications, memory switching devices, etc , . 3 Soliman et al. Tin Selenide a p type and Nickel doped tin oxide n type deposited on a glass substrate will form a p-n junction. SnSe with low dimensionality has been reported as an appealing material with a diverse range of applications such as rechargeable lithium-ion batteries, memory switching devices, solar energy conversion, thermoelectric energy conversion, and near-infrared optoelectronic devices. 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